000			01500nam a2200205Ia 4500
020			_a9788120330207
040			_cCUS
082			_a621.38152 _bSTR/S
100			_aStreetman, Ben G. _911409
245		0	_aSolid state electronic devices/ _cBen G. Streetman and Sanjay Kumar Banerjee.
250			_a6th ed.
260			_aNew Delhi: _bPrentice, _c2005.
300			_axviii, 581 p. _c25 cm.
505			_aCrystal properties and growth of semiconductors -- Atoms and electrons -- Energy bands and charge carriers in semiconductors -- Excess carriers in semiconductors -- Junctions -- Field-effect transistors -- Bipolar junction transistors -- Optoelectronic devices -- Integrated circuits -- High-frequency and high-power devices -- App. I. Definitions of commonly used symbols -- App. II. Physical constants and conversion factors -- App. III. Properties of semiconductor materials -- App. IV. Derivation of the density of states in the conduction band -- App. V. Derivation of Fermi-Dirac statistics -- App. VI. Dry and wet thermal oxide thickness grown on Si (100) as a function of time and temperature -- App. VII. Solid solubilities of impurities in Si -- App. VIII. Diffusivities of dopants in Si and SiO[subscript 2] -- App. IX. Projected range and straggle as function of implant energy in Si.
650			_aSemiconductors. _911410
650			_aSemiconducteurs. _911411
650			_aHalfgeleiders. _911412
700			_aBanerjee, Sanjay Kumar _911408
942			_cWB16
999			_c153963 _d153963