000			01497nam a2200217Ia 4500
999			_c150233 _d150233
020			_a9788131708125
040			_cCUS
082			_a530.41 _bSTR/S
100			_aStreetman , Ben G. _911409
245		0	_aSolid state electroni devices/ _cBen G. Streetman and Sanjay Kumar Banerjee
250			_a6th ed.
260			_aSouth Asia: _bPearson, _c2006.
300			_axviii, 581 p. : _bill. ; _c25 cm.
440			_aPrentice Hall series in solid state physical electronics _911413
505			_a1. Crystal properties and growth of semiconductors -- 2. Atoms and electrons -- 3. Energy bands and charge carriers in semiconductors -- 4. Excess carriers in semiconductors -- 5. Junctions -- 6. Field-effect transistors -- 7. Bipolar junction transistors -- 8. Optoelectronic devices -- 9. Integrated circuits -- 10. High-frequency and high-power devices -- App. Physical constants and conversion factors -- App. Properties of semiconductor materials -- App. Derivation of the density of states in the conduction band -- App. Derivation of Fermi-Dirac statistics -- App. Dry and wet thermal oxide thickness grown on Si (100) as a function of time and temperature -- App. Solid solubilities of impurities in Si -- App. Diffusivities of dopants in Si and SiO[subscript 2] -- App. Projected range and straggle as function of implant energy in Si.
650			_aSemiconductors _911410
650			_aSolid state physics
650			_aPhysics
700			_aBanerjee, Sanjay Kumar. _911408
942			_cSC79 _01