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Solid state electronic devices/ Ben G. Streetman and Sanjay Kumar Banerjee.

By: Streetman, Ben G Contributor(s): Banerjee, Sanjay Kumar Material type: Text

TextPublication details: New Delhi: Prentice, 2005Edition: 6th edDescription: xviii, 581 p. 25 cmISBN: 9788120330207Subject(s): Semiconductors | Semiconducteurs | HalfgeleidersDDC classification: 621.38152

Contents:

Crystal properties and growth of semiconductors -- Atoms and electrons -- Energy bands and charge carriers in semiconductors -- Excess carriers in semiconductors -- Junctions -- Field-effect transistors -- Bipolar junction transistors -- Optoelectronic devices -- Integrated circuits -- High-frequency and high-power devices -- App. I. Definitions of commonly used symbols -- App. II. Physical constants and conversion factors -- App. III. Properties of semiconductor materials -- App. IV. Derivation of the density of states in the conduction band -- App. V. Derivation of Fermi-Dirac statistics -- App. VI. Dry and wet thermal oxide thickness grown on Si (100) as a function of time and temperature -- App. VII. Solid solubilities of impurities in Si -- App. VIII. Diffusivities of dopants in Si and SiO[subscript 2] -- App. IX. Projected range and straggle as function of implant energy in Si.

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Holdings
Item type	Current library	Call number	Status	Date due	Barcode	Item holds
General Books	Central Library, Sikkim University General Book Section	621.38152 STR/S (Browse shelf(Opens below))	Available		P08747

Total holds: 0

Crystal properties and growth of semiconductors --
Atoms and electrons --
Energy bands and charge carriers in semiconductors --
Excess carriers in semiconductors --
Junctions --
Field-effect transistors --
Bipolar junction transistors --
Optoelectronic devices --
Integrated circuits --
High-frequency and high-power devices --
App. I. Definitions of commonly used symbols --
App. II. Physical constants and conversion factors --
App. III. Properties of semiconductor materials --
App. IV. Derivation of the density of states in the conduction band --
App. V. Derivation of Fermi-Dirac statistics --
App. VI. Dry and wet thermal oxide thickness grown on Si (100) as a function of time and temperature --
App. VII. Solid solubilities of impurities in Si --
App. VIII. Diffusivities of dopants in Si and SiO[subscript 2] --
App. IX. Projected range and straggle as function of implant energy in Si.

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