Solid state electronic devices/
Ben G. Streetman and Sanjay Kumar Banerjee.
- 6th ed.
- New Delhi: Prentice, 2005.
- xviii, 581 p. 25 cm.
Crystal properties and growth of semiconductors -- Atoms and electrons -- Energy bands and charge carriers in semiconductors -- Excess carriers in semiconductors -- Junctions -- Field-effect transistors -- Bipolar junction transistors -- Optoelectronic devices -- Integrated circuits -- High-frequency and high-power devices -- App. I. Definitions of commonly used symbols -- App. II. Physical constants and conversion factors -- App. III. Properties of semiconductor materials -- App. IV. Derivation of the density of states in the conduction band -- App. V. Derivation of Fermi-Dirac statistics -- App. VI. Dry and wet thermal oxide thickness grown on Si (100) as a function of time and temperature -- App. VII. Solid solubilities of impurities in Si -- App. VIII. Diffusivities of dopants in Si and SiO[subscript 2] -- App. IX. Projected range and straggle as function of implant energy in Si.