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Lecture notes on principles of plasma processing/ Francis F. Chen and Jane P. Chang.

By: Chen, Francis FContributor(s): Chang, Jane PMaterial type: Text

TextPublication details: New York : Kluwer Academic/Plenum Publishers, 2003Description: ix, 208 p. : ill. ; 28 cmISBN: 0306474972Other title: Principles of plasma processingSubject(s): Plasma engineering | Plasma chemistry | Plasma dynamicsDDC classification: 530.44

Contents:

Part A1: Introduction to Plasma Science. I. What is plasma? II.Plasma fundamentals. Part A2: Introduction to Gas Discharges. III. Gas discharge fundamentals. Part A3: Plasma Sources I. IV. Introduction to plasma sources. Part A4: Plasma Sources II. V. RIE discharges. Plasma Chemistry. Part A5: Plasma Sources III. VI. ECR sources. Part A6: Plasma Sources IV. VIII. Helicon wave sources and HDPs. IX. Discharge equilibrium. Part A7: Plasma Diagnostics. X. Introduction. XI. Remote diagnostics. Langmuir probes. XIII. Other local diagnostics. Part B1: Overview of Plasma Processing in Microelectronics Fabrication. I. Plasma processing. II. Applications in microelectronics. Part B2: Kinetic Theory and Collisions. I. Kinetic theory. II. Practical gas kinetic models and macroscopic properties. III. Collision dynamics. Part B3: Atomic Collisions and Spectra. I. Atomic energy levels. II. Atomic collisions. IV. Inelastic collisions. Part B4: Molecular Collisions and Spectra. I. Molecular energy levels. II. Selection rule for optimal emission of molecules. IV Heavy particle collisions. V. Gas phase kinetics. Part B5: Plasma Diagnostics. I. Optical emission spectography. II. Laser induced fluorescence. III. Laser Interferometry. IV. Full-wafer interferometry. V. Mass spectrometry. Part B6: Plasma Surface Kinetics. I. Plasma chemistry. II. Surface reactions. III. Loading. IV. Selectivity. V. Detailed reaction modeling. Part B7: Feature Evolution and Modeling. I. Fundamentals of feature evolution in plasma etching. II. Predictive modeling. III. Mechanisms of profile evolution. IV. Profile simulation. V. Plasma damage. Epilogue: Current Problems in Semiconductor Processing. I. Front-end challenges. II. Back-end challenges. III. Patterning nanometer features. IV. Deep reactive etch for MEMS. V. Plasma-induced damage. VI. Species control in plasma reactors.

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Holdings
Item type	Current library	Call number	Status	Notes	Date due	Barcode	Item holds
General Books Science Library	Science Library, Sikkim University Science Library General Section	530.44 CHE/L (Browse shelf(Opens below))	Available	Books For SU Science Library		P19117

Total holds: 0

Part A1: Introduction to Plasma Science. I. What is plasma? II.Plasma fundamentals.
Part A2: Introduction to Gas Discharges. III. Gas discharge fundamentals.
Part A3: Plasma Sources I. IV. Introduction to plasma sources.
Part A4: Plasma Sources II. V. RIE discharges. Plasma Chemistry.
Part A5: Plasma Sources III. VI. ECR sources.
Part A6: Plasma Sources IV. VIII. Helicon wave sources and HDPs. IX. Discharge equilibrium.
Part A7: Plasma Diagnostics. X. Introduction. XI. Remote diagnostics. Langmuir probes. XIII. Other local diagnostics.

Part B1: Overview of Plasma Processing in Microelectronics Fabrication. I. Plasma processing. II. Applications in microelectronics. Part B2: Kinetic Theory and Collisions. I. Kinetic theory. II. Practical gas kinetic models and macroscopic properties. III. Collision dynamics.
Part B3: Atomic Collisions and Spectra. I. Atomic energy levels. II. Atomic collisions. IV. Inelastic collisions.
Part B4: Molecular Collisions and Spectra. I. Molecular energy levels. II. Selection rule for optimal emission of molecules. IV Heavy particle collisions. V. Gas phase kinetics.
Part B5: Plasma Diagnostics. I. Optical emission spectography. II. Laser induced fluorescence. III. Laser Interferometry. IV. Full-wafer interferometry. V. Mass spectrometry.

Part B6: Plasma Surface Kinetics. I. Plasma chemistry. II. Surface reactions. III. Loading. IV. Selectivity. V. Detailed reaction modeling. Part B7: Feature Evolution and Modeling. I. Fundamentals of feature evolution in plasma etching. II. Predictive modeling. III. Mechanisms of profile evolution. IV. Profile simulation. V. Plasma damage. Epilogue: Current Problems in Semiconductor Processing. I. Front-end challenges. II. Back-end challenges. III. Patterning nanometer features. IV. Deep reactive etch for MEMS. V. Plasma-induced damage. VI. Species control in plasma reactors.

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