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Solid state electronic devices/ Ben G. Streetman and Sanjay Kumar Banerjee.

By: Streetman, Ben G Contributor(s): Banerjee, Sanjay Kumar Material type: Text

TextSeries: Prentice Hall series in solid state physical electronicsPublication details: New Delhi: Prentice, 2005Edition: 6th edDescription: xviii, 581 p. : ill. ; 25 cmISBN: 9788120330207Subject(s): Semiconductors | Solid state electronicsDDC classification: 621.38152

Contents:

1. Crystal properties and growth of semiconductors -- 2. Atoms and electrons -- 3. Energy bands and charge carriers in semiconductors -- 4. Excess carriers in semiconductors -- 5. Junctions -- 6. Field-effect transistors -- 7. Bipolar junction transistors -- 8. Optoelectronic devices -- 9. Integrated circuits -- 10. High-frequency and high-power devices -- App. Physical constants and conversion factors -- App. Properties of semiconductor materials -- App. Derivation of the density of states in the conduction band -- App. Derivation of Fermi-Dirac statistics -- App. Dry and wet thermal oxide thickness grown on Si (100) as a function of time and temperature -- App. Solid solubilities of impurities in Si -- App. Diffusivities of dopants in Si and SiO[subscript 2] -- App. Projected range and straggle as function of implant energy in Si.

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Holdings
Item type	Current library	Call number	Status	Date due	Barcode	Item holds
General Books	Central Library, Sikkim University General Book Section	621.38152 STR/S (Browse shelf(Opens below))	Available		P05879

Total holds: 0

1. Crystal properties and growth of semiconductors --
2. Atoms and electrons --
3. Energy bands and charge carriers in semiconductors --
4. Excess carriers in semiconductors --
5. Junctions --
6. Field-effect transistors --
7. Bipolar junction transistors --
8. Optoelectronic devices --
9. Integrated circuits --
10. High-frequency and high-power devices --
App. Physical constants and conversion factors --
App. Properties of semiconductor materials --
App. Derivation of the density of states in the conduction band --
App. Derivation of Fermi-Dirac statistics --
App. Dry and wet thermal oxide thickness grown on Si (100) as a function of time and temperature --
App. Solid solubilities of impurities in Si --
App. Diffusivities of dopants in Si and SiO[subscript 2] --
App. Projected range and straggle as function of implant energy in Si.

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