Solid state electroni devices/ Ben G. Streetman and Sanjay Kumar Banerjee
Material type: TextSeries: Prentice Hall series in solid state physical electronicsPublication details: South Asia: Pearson, 2006Edition: 6th edDescription: xviii, 581 p. : ill. ; 25 cmISBN: 9788131708125Subject(s): Semiconductors | Solid state physics | PhysicsDDC classification: 530.41Item type | Current library | Call number | Status | Notes | Date due | Barcode | Item holds |
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General Books Science Library | Science Library, Sikkim University Science Library General Section | 530.41 STR/S (Browse shelf(Opens below)) | Checked out | Books For SU Science Library | 11/06/2024 | P04897 |
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530.41 PAN/C Current development in solid-state fermentation/ | 530.41 SRI/E Elements of solid state physics/ | 530.41 SRI/E Elements of solid state physics/ | 530.41 STR/S Solid state electroni devices/ | 530.41 STR/S Solid state electronic devices/ | 530.41 WAH/S Solid state physics/ | 530.41 WAH/S Solid state physics/ |
1. Crystal properties and growth of semiconductors --
2. Atoms and electrons --
3. Energy bands and charge carriers in semiconductors --
4. Excess carriers in semiconductors --
5. Junctions --
6. Field-effect transistors --
7. Bipolar junction transistors --
8. Optoelectronic devices --
9. Integrated circuits --
10. High-frequency and high-power devices --
App. Physical constants and conversion factors --
App. Properties of semiconductor materials --
App. Derivation of the density of states in the conduction band --
App. Derivation of Fermi-Dirac statistics --
App. Dry and wet thermal oxide thickness grown on Si (100) as a function of time and temperature --
App. Solid solubilities of impurities in Si --
App. Diffusivities of dopants in Si and SiO[subscript 2] --
App. Projected range and straggle as function of implant energy in Si.
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