Lecture notes on principles of plasma processing/ (Record no. 164205)

MARC details
000 -LEADER
fixed length control field 01362cam a22003014a 4500
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 0306474972
040 ## - CATALOGING SOURCE
Transcribing agency CUS
082 00 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 530.44
Item number CHE/L
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Chen, Francis F.,
245 10 - TITLE STATEMENT
Title Lecture notes on principles of plasma processing/
Statement of responsibility, etc. Francis F. Chen and Jane P. Chang.
246 30 - VARYING FORM OF TITLE
Title proper/short title Principles of plasma processing
260 ## - PUBLICATION, DISTRIBUTION, ETC. (IMPRINT)
Place of publication, distribution, etc. New York :
Name of publisher, distributor, etc. Kluwer Academic/Plenum Publishers,
Date of publication, distribution, etc. 2003.
300 ## - PHYSICAL DESCRIPTION
Extent ix, 208 p. :
Other physical details ill. ;
Dimensions 28 cm.
505 ## - FORMATTED CONTENTS NOTE
Formatted contents note Part A1: Introduction to Plasma Science. I. What is plasma? II.Plasma fundamentals.<br/>Part A2: Introduction to Gas Discharges. III. Gas discharge fundamentals.<br/>Part A3: Plasma Sources I. IV. Introduction to plasma sources.<br/>Part A4: Plasma Sources II. V. RIE discharges. Plasma Chemistry.<br/>Part A5: Plasma Sources III. VI. ECR sources.<br/>Part A6: Plasma Sources IV. VIII. Helicon wave sources and HDPs. IX. Discharge equilibrium.<br/>Part A7: Plasma Diagnostics. X. Introduction. XI. Remote diagnostics. Langmuir probes. XIII. Other local diagnostics.<br/><br/>Part B1: Overview of Plasma Processing in Microelectronics Fabrication. I. Plasma processing. II. Applications in microelectronics. Part B2: Kinetic Theory and Collisions. I. Kinetic theory. II. Practical gas kinetic models and macroscopic properties. III. Collision dynamics.<br/>Part B3: Atomic Collisions and Spectra. I. Atomic energy levels. II. Atomic collisions. IV. Inelastic collisions.<br/>Part B4: Molecular Collisions and Spectra. I. Molecular energy levels. II. Selection rule for optimal emission of molecules. IV Heavy particle collisions. V. Gas phase kinetics.<br/>Part B5: Plasma Diagnostics. I. Optical emission spectography. II. Laser induced fluorescence. III. Laser Interferometry. IV. Full-wafer interferometry. V. Mass spectrometry.<br/><br/>Part B6: Plasma Surface Kinetics. I. Plasma chemistry. II. Surface reactions. III. Loading. IV. Selectivity. V. Detailed reaction modeling. Part B7: Feature Evolution and Modeling. I. Fundamentals of feature evolution in plasma etching. II. Predictive modeling. III. Mechanisms of profile evolution. IV. Profile simulation. V. Plasma damage. Epilogue: Current Problems in Semiconductor Processing. I. Front-end challenges. II. Back-end challenges. III. Patterning nanometer features. IV. Deep reactive etch for MEMS. V. Plasma-induced damage. VI. Species control in plasma reactors.
650 #0 - SUBJECT
Keyword Plasma engineering.
650 #0 - SUBJECT
Keyword Plasma chemistry.
650 #0 - SUBJECT
Keyword Plasma dynamics.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Chang, Jane P.,
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type General Books Science Library
Holdings
Withdrawn status Lost status Damaged status Not for loan Home library Current library Shelving location Date acquired Full call number Accession number Date last seen Koha item type Public note
        Science Library, Sikkim University Science Library, Sikkim University Science Library General Section 29/08/2016 530.44 CHE/L P19117 16/01/2020 General Books Science Library Books For SU Science Library
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