Solid state electroni devices/
Streetman , Ben G.
Solid state electroni devices/ Ben G. Streetman and Sanjay Kumar Banerjee - 6th ed. - South Asia: Pearson, 2006. - xviii, 581 p. : ill. ; 25 cm. - Prentice Hall series in solid state physical electronics .
1. Crystal properties and growth of semiconductors --
2. Atoms and electrons --
3. Energy bands and charge carriers in semiconductors --
4. Excess carriers in semiconductors --
5. Junctions --
6. Field-effect transistors --
7. Bipolar junction transistors --
8. Optoelectronic devices --
9. Integrated circuits --
10. High-frequency and high-power devices --
App. Physical constants and conversion factors --
App. Properties of semiconductor materials --
App. Derivation of the density of states in the conduction band --
App. Derivation of Fermi-Dirac statistics --
App. Dry and wet thermal oxide thickness grown on Si (100) as a function of time and temperature --
App. Solid solubilities of impurities in Si --
App. Diffusivities of dopants in Si and SiO[subscript 2] --
App. Projected range and straggle as function of implant energy in Si.
9788131708125
Semiconductors
Solid state physics
Physics
530.41 / STR/S
Solid state electroni devices/ Ben G. Streetman and Sanjay Kumar Banerjee - 6th ed. - South Asia: Pearson, 2006. - xviii, 581 p. : ill. ; 25 cm. - Prentice Hall series in solid state physical electronics .
1. Crystal properties and growth of semiconductors --
2. Atoms and electrons --
3. Energy bands and charge carriers in semiconductors --
4. Excess carriers in semiconductors --
5. Junctions --
6. Field-effect transistors --
7. Bipolar junction transistors --
8. Optoelectronic devices --
9. Integrated circuits --
10. High-frequency and high-power devices --
App. Physical constants and conversion factors --
App. Properties of semiconductor materials --
App. Derivation of the density of states in the conduction band --
App. Derivation of Fermi-Dirac statistics --
App. Dry and wet thermal oxide thickness grown on Si (100) as a function of time and temperature --
App. Solid solubilities of impurities in Si --
App. Diffusivities of dopants in Si and SiO[subscript 2] --
App. Projected range and straggle as function of implant energy in Si.
9788131708125
Semiconductors
Solid state physics
Physics
530.41 / STR/S